In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN
نویسندگان
چکیده
Related Articles Ethanol-enriched low-pressure chemical vapor deposition ZnO bilayers: Properties and growth—A potential electrode for thin film solar cells J. Appl. Phys. 113, 024908 (2013) Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate J. Appl. Phys. 113, 023510 (2013) High p-type conduction in high-Al content Mg-doped AlGaN Appl. Phys. Lett. 102, 012105 (2013) Portable atomic layer deposition reactor for in situ synchrotron photoemission studies Rev. Sci. Instrum. 84, 015104 (2013) Ultrahigh conductivity of large area suspended few layer graphene films Appl. Phys. Lett. 101, 263101 (2012)
منابع مشابه
The Role of Magnetic Field in Atomic Layer Deposition of Al2O3 Thin Films Enhanced by Radio Frequency Plasma
As a media aluminum oxide (Al2O3) thin films deposited by radio frequency plasma-assisted atomic layer deposition (RF-PA-ALD) method were employed to explore the magnetic field effect. Different from normal plasma-assisted ALD (PA-ALD) technology a magnetic field was applied during the whole deposition process. With this novel ALD technology it obtains that the deposition rate in each cycle of ...
متن کاملStructural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer
AlxGa1−xN/GaN x 0.3 heterostructures with and without a high-temperature HT AlN interlayer IL have been grown on sapphire Al2O3 substrates and AlN buffer/Al2O3 templates by metal organic chemical vapor deposition. The effects of an AlN buffer layer BL grown on an Al2O3 substrate and an AlN IL grown under the AlGaN ternary layer TL on structural, morphological, and optical properties of the hete...
متن کاملInvestigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy
The surface polarization of Ga-face gallium nitride (GaN) (2 nm)/AlGaN (22 nm)/GaN channel (150 nm)/buffer/Si with Al2O3 capping layer is investigated by angle-resolved X-ray photoelectron spectroscopy (ARXPS). It is found that the energy band varies from upward bending to downward bending in the interface region, which is believed to be corresponding to the polarization variation. An interfaci...
متن کاملSurface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al2O3
Related Articles Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface J. Appl. Phys. 111, 093713 (2012) Magnetic properties of ZnO nanoclusters J. Appl. Phys. 111, 084321 (2012) Self-passivation of transparent single-walled carbon nanotube films on plastic substrates by microwave-induced rapid nanowelding Appl. Phys. Lett. 100, 163120 (2012) N...
متن کاملALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
An effective passivation technique for AlGaN/GaN HEMTs is presented. This technique features ultrathin AlN film grown by atomic layer deposition (ALD). With in-situ remote plasma pretreatment prior to the AlN deposition, atomic sharp interface between ALD-AlN and III-nitride can be obtained. Significant current collapse suppression and dynamic ON-resistance reduction are demonstrated in the ALD...
متن کامل